CMLT4413 surface mount complementary npn/pnp silicon transistor description: the central semiconductor CMLT4413 consists of one isolated 2n4401 npn silicon transistor and one complementary isolated 2n4403 pnp silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an sot-563 surface mount package. this picomini? device is designed for small signal general purpose amplifier and switching applications. marking code: pc3 maximum ratings: (t a =25c) symbol npn (q1) pnp (q2) units collector-base voltage v cbo 60 40 v collector-emitter voltage v ceo 40 40 v emitter-base voltage v ebo 6.0 5.0 v continuous collector current i c 600 ma power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) npn (q1) pnp (q2) symbol test conditions min max min max units i cev v ce =35v, v eb =0.4v - 0.1 - 0.1 a i bev v ce =35v, v eb =0.4v - 0.1 - 0.1 a bv cbo i c =100a 60 - 40 - v bv ceo i c =1.0ma 40 - 40 - v bv ebo i e =100a 6.0 - 5.0 - v v ce(sat) i c =150ma, i b =15ma - 0.40 - 0.40 v v ce(sat) i c =500ma, i b =50ma - 0.75 - 0.75 v v be(sat) i c =150ma, i b =15ma 0.75 0.95 0.75 0.95 v v be(sat) i c =500ma, i b =50ma - 1.2 - 1.3 v h fe v ce =1.0v, i c =0.1ma 20 - 30 - h fe v ce =1.0v, i c =1.0ma 40 - 60 - h fe v ce =1.0v, i c =10ma 80 - 100 - h fe v ce =1.0v, i c =150ma 100 300 - - h fe v ce =2.0v, i c =150ma - - 100 300 h fe v ce =2.0v, i c =500ma 40 - 20 - f t v ce =10v, i c =20ma, f=100mhz 250 - 200 - mhz c ob v cb =5.0v, i e =0, f=1.0mhz - 6.5 - 8.5 pf c ib v be =0.5v, i c =0, f=1.0mhz - 30 - 30 pf ? device is halogen free by design notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4mm 2 sot-563 case r1 (20-january 2010) www.centralsemi.com
CMLT4413 surface mount complementary npn/pnp silicon transistor electrical characteristics per transistor - continued: (t a =25c) npn (q1) pnp (q2) symbol test conditions min max min max units h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 15 1.5 15 k h re v ce =10v, i c =1.0ma, f=1.0khz 0.1 8.0 0.1 8.0 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 40 500 60 500 h oe v ce =10v, i c =1.0ma, f=1.0khz 1.0 30 1.0 100 s t d v cc =30v, v be =2.0v, i c =150ma, i b1 =15ma - 15 - 15 ns t r v cc =30v, v be =2.0v, i c =150ma, i b1 =15ma - 20 - 20 ns t s v cc =30v, i c =150ma, i b1 =i b2 =15ma - 225 - 225 ns t f v cc =30v, i c =150ma, i b1 =i b2 =15ma - 30 - 30 ns sot-563 case - mechanical outline lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 marking code: pc3 pin configuration www.centralsemi.com r1 (20-january 2010)
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